Toshiba Electronic Devices & Storage Corporation has developed a bare die 1200V Silicon Carbide (SiC) MOSFET "X5M007E120" for automotive traction inverters. This product featuring an innovative structure providing both low on-resistance and high reliability is currently shipping test samples for customer evaluation. The X5M007E120 specifications: 1200V voltage rating enabling compatibility with 800V vehicle architectures; ultra-low on-resistance reducing conduction losses and improving EV range; bare die format allowing automakers to integrate directly into custom power modules optimized for their specific thermal management and packaging requirements; automotive-grade reliability meeting AEC-Q101 qualification. The SiC advantage for EV traction: SiC MOSFETs enable higher switching frequencies than silicon IGBTs, reducing the size of inductors and capacitors in the inverter; higher voltage tolerance enables 800V architectures (adopted by Porsche Taycan, Hyundai IONIQ 6/9, upcoming Tesla models) that charge faster and lose less energy in conversion; Toshiba entry into the automotive SiC market positions it against established suppliers ON Semiconductor, Wolfspeed, STMicroelectronics, and Infineon in a market expected to reach 6+ billion USD by 2027 as EV adoption accelerates.